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Dislocations in Si generated by fatigue at room temperature

Kato, N. I. / Nishikawa, A. / Saka, H.

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Dislocations in Si generated by fatigue at room temperature

Kato, N. I. / Nishikawa, A. / Saka, H.

Dislocations in Si generated by fatigue at room temperature

Kato, N. I. / Nishikawa, A. / Saka, H.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Dislocations in Si generated by fatigue at room temperature

Contributors:

Kato, N. I. (author) / Nishikawa, A. (author) / Saka, H. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 113-115

Publication date:

2001-01-01

Size:

3 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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