Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg: Fid-Bau Portal

Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg

Kaminska, E. / Piotrowska, A. / Barcz, A. / Bour, D. / Zielinski, M. / Jasinski, J.

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Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg

Kaminska, E. / Piotrowska, A. / Barcz, A. / Bour, D. / Zielinski, M. / Jasinski, J.

Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg

Kaminska, E. / Piotrowska, A. / Barcz, A. / Bour, D. / Zielinski, M. / Jasinski, J.

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Document information

Title:

Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg

Contributors:

Kaminska, E. (author) / Piotrowska, A. (author) / Barcz, A. (author) / Bour, D. (author) / Zielinski, M. (author) / Jasinski, J. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 265 - 267

Publication date:

2001-01-01

Size:

3 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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