A platform for research: civil engineering, architecture and urbanism
Al^+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts
Al^+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts
Al^+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts
Nipoti, R. (author) / Hallen, A. (author) / Parisini, A. (author) / Moscatelli, F. (author) / Vantaggio, S. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.
2013-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC
British Library Online Contents | 2011
|Improved AlNi Ohmic Contacts to p-Type SiC
British Library Online Contents | 2004
|Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN
British Library Online Contents | 2009
|Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC
British Library Online Contents | 2000
|British Library Online Contents | 2011
|