A platform for research: civil engineering, architecture and urbanism
Formation of stacking faults from misfit dislocations at the BaTiO3/SrTiO3 interface simulated by molecular dynamics
Formation of stacking faults from misfit dislocations at the BaTiO3/SrTiO3 interface simulated by molecular dynamics
Formation of stacking faults from misfit dislocations at the BaTiO3/SrTiO3 interface simulated by molecular dynamics
Wunderlich, W. (author) / Fujimoto, M. (author) / Ohsato, H. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- A ; 309-310 ; 148-151
2001-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2010
|Molecular Dynamics Study on Characteristics of Misfit Dislocations in Ni-Based Superalloys
British Library Online Contents | 2007
|Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes
British Library Online Contents | 2004
|Relaxation of Misfit Dislocations at Nodes
British Library Online Contents | 2014
|Equilibrium position of misfit dislocations at the NiAl-Cr(Mo) interface
British Library Online Contents | 2000
|