Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes: Fid-Bau Portal

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes

Twigg, M. E. / Stahlbush, R. E. / Fatemi, M. / Arthur, S. D. / Fedison, J. B. / Tucker, J. B. / Wang, S.

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Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes

Twigg, M. E. / Stahlbush, R. E. / Fatemi, M. / Arthur, S. D. / Fedison, J. B. / Tucker, J. B. / Wang, S.

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes

Twigg, M. E. / Stahlbush, R. E. / Fatemi, M. / Arthur, S. D. / Fedison, J. B. / Tucker, J. B. / Wang, S.

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Title:

Partial Dislocations and Stacking Faults in 4H-SiC PiN Diodes

Contributors:

Twigg, M. E. (author) / Stahlbush, R. E. (author) / Fatemi, M. (author) / Arthur, S. D. (author) / Fedison, J. B. (author) / Tucker, J. B. (author) / Wang, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 537-542

Publication date:

2004-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes

Liu, J. Q. / Skowronski, M. / Hallin, C. et al. | British Library Online Contents | 2002

Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes

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