A platform for research: civil engineering, architecture and urbanism
A Study of Vacancy-Like Defects in the Chalcopyrite Semiconductor AgInSe~2
A Study of Vacancy-Like Defects in the Chalcopyrite Semiconductor AgInSe~2
A Study of Vacancy-Like Defects in the Chalcopyrite Semiconductor AgInSe~2
Al-Kotb, M. S. (author) / Puff, W. (author) / Hassan, S. A. (author) / Mohsen, M. (author)
MATERIALS SCIENCE FORUM ; 363/365 ; 150-152
2001-01-01
3 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Thermoelectric Properties of a Wide-Gap Chalcopyrite Compound AgInSe~2
British Library Online Contents | 2012
|Characterization of laser ablated AgInSe~2 films
British Library Online Contents | 2010
|Optical absorption studies on single-phase polycrystalline AgInSe~2 thin films
British Library Online Contents | 1996
|Growth of AgInSe~2 on Si(100) Substrate by Pulse Laser Ablation
British Library Online Contents | 2009
|A Positron Lifetime Study of Lattice Defects in Chalcopyrite Semiconductors
British Library Online Contents | 1997
|