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MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

Normand, P. / Kapetanakis, E. / Tsoukalas, D. / Kamoulakos, G. / Beltsios, K. / Van Den Berg, J. / Zhang, S.

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MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

Normand, P. / Kapetanakis, E. / Tsoukalas, D. / Kamoulakos, G. / Beltsios, K. / Van Den Berg, J. / Zhang, S.

MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

Normand, P. / Kapetanakis, E. / Tsoukalas, D. / Kamoulakos, G. / Beltsios, K. / Van Den Berg, J. / Zhang, S.

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Title:

MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation

Contributors:

Normand, P. (author) / Kapetanakis, E. (author) / Tsoukalas, D. (author) / Kamoulakos, G. (author) / Beltsios, K. (author) / Van Den Berg, J. (author) / Zhang, S. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -AMSTERDAM THEN LAUSANNE- C ; 15 ; 145-147

Publication date:

2001-01-01

Size:

3 pages

ISSN:

0928-4931

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1 / 660

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