Preparation and characterization of SiO2/6H-SiC metal-insulator-semiconductor structure using TEOS as source material: Fid-Bau Portal

Preparation and characterization of SiO2/6H-SiC metal-insulator-semiconductor structure using TEOS as source material

Kamimura, K. / Kobayashi, D. / Okada, S. / Mizuguchi, T. / Ryu, E. / Hayashibe, R. / Nagaune, F. / Onuma, Y.

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Preparation and characterization of SiO2/6H-SiC metal-insulator-semiconductor structure using TEOS as source material

Kamimura, K. / Kobayashi, D. / Okada, S. / Mizuguchi, T. / Ryu, E. / Hayashibe, R. / Nagaune, F. / Onuma, Y.

Preparation and characterization of SiO2/6H-SiC metal-insulator-semiconductor structure using TEOS as source material

Kamimura, K. / Kobayashi, D. / Okada, S. / Mizuguchi, T. / Ryu, E. / Hayashibe, R. / Nagaune, F. / Onuma, Y.

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Document information

Title:

Preparation and characterization of SiO2/6H-SiC metal-insulator-semiconductor structure using TEOS as source material

Contributors:

Kamimura, K. (author) / Kobayashi, D. (author) / Okada, S. (author) / Mizuguchi, T. (author) / Ryu, E. (author) / Hayashibe, R. (author) / Nagaune, F. (author) / Onuma, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 184 ; 346-349

Publication date:

2001-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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