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Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation

Chung, G. Y. / Williams, J. R. / Tin, C. C. / McDonald, K. / Farmer, D. / Chanana, R. K. / Pantelides, S. T. / Holland, O. W. / Feldman, L. C.

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Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation

Chung, G. Y. / Williams, J. R. / Tin, C. C. / McDonald, K. / Farmer, D. / Chanana, R. K. / Pantelides, S. T. / Holland, O. W. / Feldman, L. C.

Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation

Chung, G. Y. / Williams, J. R. / Tin, C. C. / McDonald, K. / Farmer, D. / Chanana, R. K. / Pantelides, S. T. / Holland, O. W. / Feldman, L. C.

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Document information

Title:

Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation

Contributors:

Chung, G. Y. (author) / Williams, J. R. (author) / Tin, C. C. (author) / McDonald, K. (author) / Farmer, D. (author) / Chanana, R. K. (author) / Pantelides, S. T. (author) / Holland, O. W. (author) / Feldman, L. C. (author)

Published in:

APPLIED SURFACE SCIENCE ; 184 ; 399-403

Publication date:

2001-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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