High Channel Mobility 4H-SiC MOSFETs: Fid-Bau Portal

High Channel Mobility 4H-SiC MOSFETs

Sveinbjornsson, E. O. / Gudjonsson, G. / Allerstam, F. / Olafsson, H. O. / Nilsson, P. A. / Zirath, H. / Rodle, T. / Jos, R.

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High Channel Mobility 4H-SiC MOSFETs

Sveinbjornsson, E. O. / Gudjonsson, G. / Allerstam, F. / Olafsson, H. O. / Nilsson, P. A. / Zirath, H. / Rodle, T. / Jos, R.

High Channel Mobility 4H-SiC MOSFETs

Sveinbjornsson, E. O. / Gudjonsson, G. / Allerstam, F. / Olafsson, H. O. / Nilsson, P. A. / Zirath, H. / Rodle, T. / Jos, R.

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Title:

High Channel Mobility 4H-SiC MOSFETs

Contributors:

Sveinbjornsson, E. O. (author) / Gudjonsson, G. (author) / Allerstam, F. (author) / Olafsson, H. O. (author) / Nilsson, P. A. (author) / Zirath, H. (author) / Rodle, T. (author) / Jos, R. (author) / Devaty, R. P. / Larkin, D. J.

Published in:

Silicon Carbide and Related Materials - 2005 ; 961-966

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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