Investigation of 4H-SiC Schottky diodes by ion beam induced charge (IBIC) technique: Fid-Bau Portal

Investigation of 4H-SiC Schottky diodes by ion beam induced charge (IBIC) technique

Manfredotti, C. / Fizzotti, F. / Lo Giudice, A. / Paolini, C. / Vittone, E. / Nava, F.

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Investigation of 4H-SiC Schottky diodes by ion beam induced charge (IBIC) technique

Manfredotti, C. / Fizzotti, F. / Lo Giudice, A. / Paolini, C. / Vittone, E. / Nava, F.

Investigation of 4H-SiC Schottky diodes by ion beam induced charge (IBIC) technique

Manfredotti, C. / Fizzotti, F. / Lo Giudice, A. / Paolini, C. / Vittone, E. / Nava, F.

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Title:

Investigation of 4H-SiC Schottky diodes by ion beam induced charge (IBIC) technique

Contributors:

Manfredotti, C. (author) / Fizzotti, F. (author) / Lo Giudice, A. (author) / Paolini, C. (author) / Vittone, E. (author) / Nava, F. (author)

Published in:

APPLIED SURFACE SCIENCE ; 184 ; 448-454

Publication date:

2001-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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