Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates: Fid-Bau Portal

Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates

Di Gaspare, L. / Scappucci, G. / Palange, E. / Alfaramawi, K. / Evangelisti, F. / Barucca, G. / Majni, G.

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Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates

Di Gaspare, L. / Scappucci, G. / Palange, E. / Alfaramawi, K. / Evangelisti, F. / Barucca, G. / Majni, G.

Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates

Di Gaspare, L. / Scappucci, G. / Palange, E. / Alfaramawi, K. / Evangelisti, F. / Barucca, G. / Majni, G.

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Title:

Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates

Contributors:

Di Gaspare, L. (author) / Scappucci, G. (author) / Palange, E. (author) / Alfaramawi, K. (author) / Evangelisti, F. (author) / Barucca, G. (author) / Majni, G. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 346 - 349

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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