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Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantation

Paul, D. J. / Ahmed, A. / Churchill, A. C. / Robbins, D. J. / Leong, W. Y.

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Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantation

Paul, D. J. / Ahmed, A. / Churchill, A. C. / Robbins, D. J. / Leong, W. Y.

Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantation

Paul, D. J. / Ahmed, A. / Churchill, A. C. / Robbins, D. J. / Leong, W. Y.

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Check availability in my library

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Document information

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Document information

Title:

Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantation

Contributors:

Paul, D. J. (author) / Ahmed, A. (author) / Churchill, A. C. (author) / Robbins, D. J. (author) / Leong, W. Y. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 111 - 115

Publication date:

2002-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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