A platform for research: civil engineering, architecture and urbanism
The influence of residual strain on Raman scattering in InxGa1-xAs single crystals
The influence of residual strain on Raman scattering in InxGa1-xAs single crystals
The influence of residual strain on Raman scattering in InxGa1-xAs single crystals
Islam, M. R. (author) / Verma, P. (author) / Yamada, M. (author) / Kodama, S. (author) / Hanaue, Y. (author) / Kinoshita, K. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 91-92 ; 66 - 69
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Nondestructive measurement of resistivity in bulk InxGa1-xAs crystals
British Library Online Contents | 2002
|Single crystal growth of compositionally graded InXGa1-XAs
British Library Online Contents | 2000
|Peculiarities of (InxGa1-x)2Se3 single crystal oxidation
British Library Online Contents | 2001
|Raman Scattering Study of Czochralski-Grown Yttrium Fluoride Single Crystals
British Library Online Contents | 1993
|Raman scattering investigation of the zinc cadmium tetrathiocyanate single crystals
British Library Online Contents | 2001
|