AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers: Fid-Bau Portal

AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers

Eremenko, V. / Gonzalez, L. / Gonzalez, Y. / Vdovin, V. / Vazquez, L. / Aragon, G. / Herrera, M. / Briones, F.

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AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers

Eremenko, V. / Gonzalez, L. / Gonzalez, Y. / Vdovin, V. / Vazquez, L. / Aragon, G. / Herrera, M. / Briones, F.

AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers

Eremenko, V. / Gonzalez, L. / Gonzalez, Y. / Vdovin, V. / Vazquez, L. / Aragon, G. / Herrera, M. / Briones, F.

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Title:

AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers

Contributors:

Eremenko, V. (author) / Gonzalez, L. (author) / Gonzalez, Y. (author) / Vdovin, V. (author) / Vazquez, L. (author) / Aragon, G. (author) / Herrera, M. (author) / Briones, F. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 91-92 ; 269 - 273

Publication date:

2002-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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