Seeded growth of GaN at high N2 pressure on (0001) polar surfaces of GaN single crystalline substrates: Fid-Bau Portal

Seeded growth of GaN at high N2 pressure on (0001) polar surfaces of GaN single crystalline substrates

Grzegory, I. / Bockowski, M. / ucznik, B. / Wroblewski, M. / Teisseyre, H. / Borysiuk, J. / Porowski, S.

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Seeded growth of GaN at high N2 pressure on (0001) polar surfaces of GaN single crystalline substrates

Grzegory, I. / Bockowski, M. / ucznik, B. / Wroblewski, M. / Teisseyre, H. / Borysiuk, J. / Porowski, S.

Seeded growth of GaN at high N2 pressure on (0001) polar surfaces of GaN single crystalline substrates

Grzegory, I. / Bockowski, M. / ucznik, B. / Wroblewski, M. / Teisseyre, H. / Borysiuk, J. / Porowski, S.

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Title:

Seeded growth of GaN at high N2 pressure on (0001) polar surfaces of GaN single crystalline substrates

Contributors:

Grzegory, I. (author) / Bockowski, M. (author) / ucznik, B. (author) / Wroblewski, M. (author) / Teisseyre, H. (author) / Borysiuk, J. (author) / Porowski, S. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 535-541

Publication date:

2001-01-01

Size:

7 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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