Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates: Fid-Bau Portal

Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates

Feng, Z. C. / Yang, T. R. / Hou, Y. T.

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Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates

Feng, Z. C. / Yang, T. R. / Hou, Y. T.

Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates

Feng, Z. C. / Yang, T. R. / Hou, Y. T.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates

Contributors:

Feng, Z. C. (author) / Yang, T. R. (author) / Hou, Y. T. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 571-576

Publication date:

2001-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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