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Passivation of the 4H-SiC/SiO~2 Interface with Nitric Oxide
Passivation of the 4H-SiC/SiO~2 Interface with Nitric Oxide
Passivation of the 4H-SiC/SiO~2 Interface with Nitric Oxide
Williams, J. R. (author) / Chung, G. Y. (author) / Tin, C. C. (author) / McDonald, K. (author) / Farmer, D. (author) / Chanana, R. K. (author) / Weller, R. A. (author) / Pantelides, S. T. (author) / Holland, O. W. (author) / Das, M. K. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 967-972
2002-01-01
6 pages
Article (Journal)
English
DDC:
620.11
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