Passivation of the 4H-SiC/SiO~2 Interface with Nitric Oxide: Fid-Bau Portal

Passivation of the 4H-SiC/SiO~2 Interface with Nitric Oxide

Williams, J. R. / Chung, G. Y. / Tin, C. C. / McDonald, K. / Farmer, D. / Chanana, R. K. / Weller, R. A. / Pantelides, S. T. / Holland, O. W. / Das, M. K.

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Passivation of the 4H-SiC/SiO~2 Interface with Nitric Oxide

Williams, J. R. / Chung, G. Y. / Tin, C. C. / McDonald, K. / Farmer, D. / Chanana, R. K. / Weller, R. A. / Pantelides, S. T. / Holland, O. W. / Das, M. K.

Passivation of the 4H-SiC/SiO~2 Interface with Nitric Oxide

Williams, J. R. / Chung, G. Y. / Tin, C. C. / McDonald, K. / Farmer, D. / Chanana, R. K. / Weller, R. A. / Pantelides, S. T. / Holland, O. W. / Das, M. K.

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Document information

Title:

Passivation of the 4H-SiC/SiO~2 Interface with Nitric Oxide

Contributors:

Williams, J. R. (author) / Chung, G. Y. (author) / Tin, C. C. (author) / McDonald, K. (author) / Farmer, D. (author) / Chanana, R. K. (author) / Weller, R. A. (author) / Pantelides, S. T. (author) / Holland, O. W. (author) / Das, M. K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 967-972

Publication date:

2002-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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