Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETs: Fid-Bau Portal

Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETs

Shimoida, Y. / Kaneko, S. / Tanaka, H. / Hoshi, M.

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Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETs

Shimoida, Y. / Kaneko, S. / Tanaka, H. / Hoshi, M.

Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETs

Shimoida, Y. / Kaneko, S. / Tanaka, H. / Hoshi, M.

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Document information

Title:

Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETs

Contributors:

Shimoida, Y. (author) / Kaneko, S. (author) / Tanaka, H. (author) / Hoshi, M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 1207-1210

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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