A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors
Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors
Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors
Koo, S.-M. (author) / Lee, S.-K. (author) / Zetterling, C.-M. (author) / Ostling, M. (author) / Forsberg, U. (author) / Janzen, E. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 1235-1238
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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