Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET: Fid-Bau Portal

Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET

Arai, M. / Honda, H. / Ogata, M. / Sawazaki, H. / Ono, S.

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Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET

Arai, M. / Honda, H. / Ogata, M. / Sawazaki, H. / Ono, S.

Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET

Arai, M. / Honda, H. / Ogata, M. / Sawazaki, H. / Ono, S.

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Order at Subito €

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Document information

Title:

Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET

Contributors:

Arai, M. (author) / Honda, H. (author) / Ogata, M. (author) / Sawazaki, H. (author) / Ono, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 1379-1382

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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