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Epitaxial Growth of (11&unknown;20) 4H-SiC Using Substrate Grown in the [11&unknown;20] Direction
Epitaxial Growth of (11&unknown;20) 4H-SiC Using Substrate Grown in the [11&unknown;20] Direction
Epitaxial Growth of (11&unknown;20) 4H-SiC Using Substrate Grown in the [11&unknown;20] Direction
Kojima, K. (author) / Ohno, T. (author) / Senzaki, J. (author) / Fukuda, K. (author) / Fujimoto, T. (author) / Katsuno, M. (author) / Ohtani, N. (author) / Nishino, J. (author) / Masahara, K. (author) / Ishida, Y. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 195-198
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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