Homoepitaxial Growth of 4H-SiC Thin Film Below 1000^oC by Microwave Plasma Chemical Vapor Deposition: Fid-Bau Portal

Homoepitaxial Growth of 4H-SiC Thin Film Below 1000^oC by Microwave Plasma Chemical Vapor Deposition

Okamoto, M. / Kosugi, R. / Tanaka, Y. / Takeuchi, D. / Nakashima, S. / Nishizawa, S. / Fukuda, K. / Okushi, H. / Arai, K.

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Homoepitaxial Growth of 4H-SiC Thin Film Below 1000^oC by Microwave Plasma Chemical Vapor Deposition

Okamoto, M. / Kosugi, R. / Tanaka, Y. / Takeuchi, D. / Nakashima, S. / Nishizawa, S. / Fukuda, K. / Okushi, H. / Arai, K.

Homoepitaxial Growth of 4H-SiC Thin Film Below 1000^oC by Microwave Plasma Chemical Vapor Deposition

Okamoto, M. / Kosugi, R. / Tanaka, Y. / Takeuchi, D. / Nakashima, S. / Nishizawa, S. / Fukuda, K. / Okushi, H. / Arai, K.

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Title:

Homoepitaxial Growth of 4H-SiC Thin Film Below 1000^oC by Microwave Plasma Chemical Vapor Deposition

Contributors:

Okamoto, M. (author) / Kosugi, R. (author) / Tanaka, Y. (author) / Takeuchi, D. (author) / Nakashima, S. (author) / Nishizawa, S. (author) / Fukuda, K. (author) / Okushi, H. (author) / Arai, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 299-302

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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