Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition: Fid-Bau Portal

Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition

Chen, Y. / Kimoto, T. / Takeuchi, Y. / Malhan, R. K. / Matsunami, H.

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Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition

Chen, Y. / Kimoto, T. / Takeuchi, Y. / Malhan, R. K. / Matsunami, H.

Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition

Chen, Y. / Kimoto, T. / Takeuchi, Y. / Malhan, R. K. / Matsunami, H.

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Check availability in my library

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Document information

Title:

Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition

Contributors:

Chen, Y. (author) / Kimoto, T. (author) / Takeuchi, Y. (author) / Malhan, R. K. (author) / Matsunami, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 189-192

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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