Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition: Fid-Bau Portal

Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition

Suda, J. / Nakamura, S. / Miura, M. / Kimoto, T. / Matsunami, H.

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Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition

Suda, J. / Nakamura, S. / Miura, M. / Kimoto, T. / Matsunami, H.

Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition

Suda, J. / Nakamura, S. / Miura, M. / Kimoto, T. / Matsunami, H.

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Check availability in my library

Order at Subito €

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Document information

Title:

Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor Deposition

Contributors:

Suda, J. (author) / Nakamura, S. (author) / Miura, M. (author) / Kimoto, T. (author) / Matsunami, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 659-662

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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