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Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
Kato, M. (author) / Tanaka, S. (author) / Ichimura, M. (author) / Arai, E. (author) / Nakamura, S. (author) / Kimoto, T. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.
2005-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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British Library Online Contents | 2002
|Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy
British Library Online Contents | 2000
|Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy
British Library Online Contents | 2002
|British Library Online Contents | 2002
|British Library Online Contents | 2000
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