A platform for research: civil engineering, architecture and urbanism
Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4x4) surfaces
Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4x4) surfaces
Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4x4) surfaces
Negoro, N. (author) / Kasai, S. (author) / Hasegawa, H. (author)
APPLIED SURFACE SCIENCE ; 190 ; 269-274
2002-01-01
6 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Angle-Scanned Photoelectron Diffraction: From Clean Surfaces to Complex Adsorption Systems
British Library Online Contents | 2002
|Density variations in scanned probe oxidation
British Library Online Contents | 2000
|Ruthenium-induced surface states on n-GaAs surfaces
Springer Verlag | 1990
|Halogen-induced surface states acceptors on GaAs(110) surfaces
British Library Online Contents | 1993
|Simulation of Cs adsorption on clean and Sb-covered GaAs surfaces
British Library Online Contents | 2006
|