A platform for research: civil engineering, architecture and urbanism
Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion-Implantation
Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion-Implantation
Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion-Implantation
Nitta, N. (author) / Taniwaki, M. (author) / Suzuki, T. (author) / Hayashi, Y. (author) / Satoh, Y. (author) / Yoshiie, T. (author)
MATERIALS TRANSACTIONS ; 43 ; 674-680
2002-01-01
7 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Ion implantation effects in GaSb
British Library Online Contents | 1994
|Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC
British Library Online Contents | 2002
|Electronic structure of GaSb under temperature and pressure effects
British Library Online Contents | 1997
|British Library Online Contents | 2002
|Anomalous Magnetic Source Defect Modelling
British Library Online Contents | 1995
|