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    Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC

    New search for: Ohno, T.
    New search for: Amemiya, K.

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    Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC

    New search for: Ohno, T.
    New search for: Amemiya, K.

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    Access via TIB
    Check availability in my library
    Order at Subito €

    Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC

    New search for: Ohno, T.
    New search for: Amemiya, K.

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Title:

    Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC

    Contributors:

    Ohno, T. (author) / Amemiya, K. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 389/393 ; 823-826

    Publication date:

    2002-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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