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Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique
Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique
Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique
Kim, J. W. (author) / Lee, J. S. (author) / Lee, W. S. (author) / Shin, J. H. (author) / Jung, D. C. (author) / Shin, M. W. (author) / Kim, C. S. (author) / Oh, J. E. (author) / Lee, J. H. (author) / Hahm, S. H. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 95 ; 73 - 76
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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