A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process
DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process
DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process
Lee, W. S. (author) / Chung, K. W. (author) / Shin, M. W. (author)
MATERIALS SCIENCE FORUM ; 338/342 ; 1639-1642
2000-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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