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    Investigation of dislocation density of GaN with single- and double-buffer layer grown on sapphire (0001) by RF-plasma assisted MBE

    New search for: Zhao, Z.
    New search for: Qi, M.
    New search for: Li, A.

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    Investigation of dislocation density of GaN with single- and double-buffer layer grown on sapphire (0001) by RF-plasma assisted MBE

    New search for: Zhao, Z.
    New search for: Qi, M.
    New search for: Li, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Investigation of dislocation density of GaN with single- and double-buffer layer grown on sapphire (0001) by RF-plasma assisted MBE

    New search for: Zhao, Z.
    New search for: Qi, M.
    New search for: Li, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Investigation of dislocation density of GaN with single- and double-buffer layer grown on sapphire (0001) by RF-plasma assisted MBE

    Contributors:

    Zhao, Z. (author) / Qi, M. (author) / Li, A. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 95 ; 308 - 313

    Publication date:

    2002-01-01

    Size:

    6 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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