Ce 4f States in CePd~2Si~2 and CeNi~2Si~2 Investigated by Resonant Photoemission Spectroscopy: Fid-Bau Portal

Ce 4f States in CePd~2Si~2 and CeNi~2Si~2 Investigated by Resonant Photoemission Spectroscopy

Mimura, K. / Okabayashi, Y. / Mizohata, H. / Sakiyama, D. / Sakai, O. / Huo, D. / Sakurai, J. / Taguchi, Y. / Ichikawa, K. / Aita, O.

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Ce 4f States in CePd~2Si~2 and CeNi~2Si~2 Investigated by Resonant Photoemission Spectroscopy

Mimura, K. / Okabayashi, Y. / Mizohata, H. / Sakiyama, D. / Sakai, O. / Huo, D. / Sakurai, J. / Taguchi, Y. / Ichikawa, K. / Aita, O.

Ce 4f States in CePd~2Si~2 and CeNi~2Si~2 Investigated by Resonant Photoemission Spectroscopy

Mimura, K. / Okabayashi, Y. / Mizohata, H. / Sakiyama, D. / Sakai, O. / Huo, D. / Sakurai, J. / Taguchi, Y. / Ichikawa, K. / Aita, O.

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Title:

Ce 4f States in CePd~2Si~2 and CeNi~2Si~2 Investigated by Resonant Photoemission Spectroscopy

Contributors:

Mimura, K. (author) / Okabayashi, Y. (author) / Mizohata, H. (author) / Sakiyama, D. (author) / Sakai, O. (author) / Huo, D. (author) / Sakurai, J. (author) / Taguchi, Y. (author) / Ichikawa, K. (author) / Aita, O. (author)

Published in:

SURFACE REVIEW AND LETTERS ; 9 ; 1035-1040

Publication date:

2002-01-01

Size:

6 pages

ISSN:

0218-625X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 530.417

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