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6H- and 4H-SiC(0001) Si Surface Richness Dosing by Hydrogen Etching: A Way to Reduce the Formation Temperature of Reconstructions
6H- and 4H-SiC(0001) Si Surface Richness Dosing by Hydrogen Etching: A Way to Reduce the Formation Temperature of Reconstructions
6H- and 4H-SiC(0001) Si Surface Richness Dosing by Hydrogen Etching: A Way to Reduce the Formation Temperature of Reconstructions
Diani, M. (author) / Diouri, J. (author) / Kubler, L. (author) / Simon, L. (author) / Aubel, D. (author) / Bolmont, D. (author)
SURFACE REVIEW AND LETTERS ; 10 ; 55-64
2003-01-01
10 pages
Article (Journal)
English
DDC:
530.417
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