Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers

Longo, M. / Parisini, A. / Tarricone, L. et al. | British Library Online Contents | 2001

Polarization anisotropy in the photoluminescence from InGaP layers grown by liquid phase epitaxy

Prutskij, T. / Diaz-Arencibia, P. / Brito-Orta, R. A. et al. | British Library Online Contents | 2004

Investigation of the cationic ordering in InGaP/GaAs epilayers grown by low-pressure, metal organic vapour phase epitaxy

Francesio, L. / Franzosi, P. / Caldironi, M. et al. | British Library Online Contents | 1994

Spinodal-like decomposition of InGaP epitaxial layers grown on GaP substrates

Novak, J. / Hasenohrl, S. / Vavra, I. et al. | British Library Online Contents | 2006

Properties of silicon pulse doped InGaP layers grown by LP-MOCVD

Malacky, L. / Kuedela, R. / Morvic, M. et al. | British Library Online Contents | 1997