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Properties of silicon pulse doped InGaP layers grown by LP-MOCVD

Malacky, L. / Kuedela, R. / Morvic, M. / Novak, J. / Wehmann, H.-H.

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Properties of silicon pulse doped InGaP layers grown by LP-MOCVD

Malacky, L. / Kuedela, R. / Morvic, M. / Novak, J. / Wehmann, H.-H.

Properties of silicon pulse doped InGaP layers grown by LP-MOCVD

Malacky, L. / Kuedela, R. / Morvic, M. / Novak, J. / Wehmann, H.-H.

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Check availability in my library

Order at Subito €

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Document information

Title:

Properties of silicon pulse doped InGaP layers grown by LP-MOCVD

Contributors:

Malacky, L. (author) / Kuedela, R. (author) / Morvic, M. (author) / Novak, J. (author) / Wehmann, H.-H. (author) / Jantz, W. / Baeumler, M.

Published in:

Solid-State Materials for Advanced Technology ; 33-35

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 44

Publication date:

1997-01-01

Size:

3 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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