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Growth of high quality silicon carbide films by bias enhanced low-pressure HFCVD using methane

George, V. C. / Das, A. / Roy, M. / Dua, A. K. / Raj, P. / Zahn, D. R.

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Growth of high quality silicon carbide films by bias enhanced low-pressure HFCVD using methane

George, V. C. / Das, A. / Roy, M. / Dua, A. K. / Raj, P. / Zahn, D. R.

Growth of high quality silicon carbide films by bias enhanced low-pressure HFCVD using methane

George, V. C. / Das, A. / Roy, M. / Dua, A. K. / Raj, P. / Zahn, D. R.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Growth of high quality silicon carbide films by bias enhanced low-pressure HFCVD using methane

Contributors:

George, V. C. (author) / Das, A. (author) / Roy, M. (author) / Dua, A. K. (author) / Raj, P. (author) / Zahn, D. R. (author)

Published in:

APPLIED SURFACE SCIENCE ; 212-213 ; 287-290

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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