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Lattice distortion near InGaP compound semiconductor surface due to surface treatment of bias sputtering
Lattice distortion near InGaP compound semiconductor surface due to surface treatment of bias sputtering
Lattice distortion near InGaP compound semiconductor surface due to surface treatment of bias sputtering
Emoto, T. (author) / Yoshida, Y. (author) / Akimoto, K. (author) / Ichimiya, A. (author) / Kikuchi, S. (author) / Itagaki, K. (author) / Namita, H. (author)
APPLIED SURFACE SCIENCE ; 216 ; 83-87
2003-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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