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    SiO2/SiC interface proved by positron annihilation

    New search for: Maekawa, M.
    New search for: Kawasuso, A.
    New search for: Yoshikawa, M.
    New search for: Itoh, H.

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    SiO2/SiC interface proved by positron annihilation

    New search for: Maekawa, M.
    New search for: Kawasuso, A.
    New search for: Yoshikawa, M.
    New search for: Itoh, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    SiO2/SiC interface proved by positron annihilation

    New search for: Maekawa, M.
    New search for: Kawasuso, A.
    New search for: Yoshikawa, M.
    New search for: Itoh, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    SiO2/SiC interface proved by positron annihilation

    Contributors:

    Maekawa, M. (author) / Kawasuso, A. (author) / Yoshikawa, M. (author) / Itoh, H. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 216 ; 365-370

    Publication date:

    2003-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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