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SiO2/SiC interface proved by positron annihilation
SiO2/SiC interface proved by positron annihilation
SiO2/SiC interface proved by positron annihilation
Maekawa, M. (Autor:in) / Kawasuso, A. (Autor:in) / Yoshikawa, M. (Autor:in) / Itoh, H. (Autor:in)
APPLIED SURFACE SCIENCE ; 216 ; 365-370
01.01.2003
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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