Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy: Fid-Bau Portal

Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy

Tomida, Y. / Nitta, S. / Kamiyama, S. / Amano, H. / Akasaki, I. / Otani, S. / Kinoshita, H. / Liu, R. / Bell, A. / Ponce, F. A.

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Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy

Tomida, Y. / Nitta, S. / Kamiyama, S. / Amano, H. / Akasaki, I. / Otani, S. / Kinoshita, H. / Liu, R. / Bell, A. / Ponce, F. A.

Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy

Tomida, Y. / Nitta, S. / Kamiyama, S. / Amano, H. / Akasaki, I. / Otani, S. / Kinoshita, H. / Liu, R. / Bell, A. / Ponce, F. A.

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Document information

Title:

Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy

Contributors:

Tomida, Y. (author) / Nitta, S. (author) / Kamiyama, S. (author) / Amano, H. (author) / Akasaki, I. (author) / Otani, S. (author) / Kinoshita, H. (author) / Liu, R. (author) / Bell, A. (author) / Ponce, F. A. (author)

Published in:

APPLIED SURFACE SCIENCE ; 216 ; 502-507

Publication date:

2003-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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