Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Improvement of power performance in planar type AlGaAs/GaAs MESFET by substrate surface oxidation

    New search for: Kagiyama, T.
    New search for: Saito, Y.
    New search for: Otobe, K.
    New search for: Nakajima, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Improvement of power performance in planar type AlGaAs/GaAs MESFET by substrate surface oxidation

    New search for: Kagiyama, T.
    New search for: Saito, Y.
    New search for: Otobe, K.
    New search for: Nakajima, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Improvement of power performance in planar type AlGaAs/GaAs MESFET by substrate surface oxidation

    New search for: Kagiyama, T.
    New search for: Saito, Y.
    New search for: Otobe, K.
    New search for: Nakajima, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Improvement of power performance in planar type AlGaAs/GaAs MESFET by substrate surface oxidation

    Contributors:

    Kagiyama, T. (author) / Saito, Y. (author) / Otobe, K. (author) / Nakajima, S. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 216 ; 542-548

    Publication date:

    2003-01-01

    Size:

    7 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Fabrication and characterization of GaAs/AlGaAs planar resonant tunneling transistor

    SeungHun Son, / JungIl Lee, / YongJu Park, et al. | IEEE | 2006

    Study of p-type AlGaAs film grown on sapphire substrate using GaAs buffer layer

    Kim, J. H. / Lee, H. J. | British Library Online Contents | 2014

    Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate

    Katakami, S. / Ogata, M. / Ono, S. et al. | British Library Online Contents | 2007

    Technology towards GaAs MESFET-based IC for high temperature applications

    Wuerfl, J. / Janke, B. | British Library Online Contents | 1997

    Fully planar AlGaAs/GaAs heterojunction bipolar transistors using chemical beam epitaxy selective growth

    Driad, R. / Duchenois, A. M. / Le Roux, G. et al. | British Library Online Contents | 1994

    Back to top