Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Fabrication and characterization of GaAs/AlGaAs planar resonant tunneling transistor

    New search for: SeungHun Son,
    New search for: JungIl Lee,
    New search for: YongJu Park,
    New search for: YunSeop Yu,
    New search for: SungWoo Hwang,
    New search for: Doyal Ahn,

    We have demonstrated electron transport in enhancement mode in-plane-gate (IPG) quantum dot (QD) transistors. A deep etched trench allows a large positive bias on the IPG, with negligible leakage current. Such enhancement mode operation has made it possible to populate ultra-small QDs with electrons. Strong NDR peaks and SET are observed in a wide gate bias window. The position of the NDR peaks systematically moves with the change of gate bias until, and also after the SET regime is reached. The size of the QD is estimated from the SET data, giving quantum energy level spacing consistent with the evolved NDR positions.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Fabrication and characterization of GaAs/AlGaAs planar resonant tunneling transistor

    New search for: SeungHun Son,
    New search for: JungIl Lee,
    New search for: YongJu Park,
    New search for: YunSeop Yu,
    New search for: SungWoo Hwang,
    New search for: Doyal Ahn,

    We have demonstrated electron transport in enhancement mode in-plane-gate (IPG) quantum dot (QD) transistors. A deep etched trench allows a large positive bias on the IPG, with negligible leakage current. Such enhancement mode operation has made it possible to populate ultra-small QDs with electrons. Strong NDR peaks and SET are observed in a wide gate bias window. The position of the NDR peaks systematically moves with the change of gate bias until, and also after the SET regime is reached. The size of the QD is estimated from the SET data, giving quantum energy level spacing consistent with the evolved NDR positions.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Fabrication and characterization of GaAs/AlGaAs planar resonant tunneling transistor

    New search for: SeungHun Son,
    New search for: JungIl Lee,
    New search for: YongJu Park,
    New search for: YunSeop Yu,
    New search for: SungWoo Hwang,
    New search for: Doyal Ahn,

    We have demonstrated electron transport in enhancement mode in-plane-gate (IPG) quantum dot (QD) transistors. A deep etched trench allows a large positive bias on the IPG, with negligible leakage current. Such enhancement mode operation has made it possible to populate ultra-small QDs with electrons. Strong NDR peaks and SET are observed in a wide gate bias window. The position of the NDR peaks systematically moves with the change of gate bias until, and also after the SET regime is reached. The size of the QD is estimated from the SET data, giving quantum energy level spacing consistent with the evolved NDR positions.

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Access

    Check access
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Fabrication and characterization of GaAs/AlGaAs planar resonant tunneling transistor

    Contributors:

    SeungHun Son, (author) / JungIl Lee, (author) / YongJu Park, (author) / YunSeop Yu, (author) / SungWoo Hwang, (author) / Doyal Ahn, (author)

    Published in:

    2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 118-119

    Publication date:

    2006-10-01

    Size:

    574253 byte

    ISBN:

    978-1-4244-0541-1 , 978-1-4244-0540-4

    DOI:

    https://doi.org/10.1109/NMDC.2006.4388712

    Type of media:

    Conference paper

    Type of material:

    Electronic Resource

    Language:

    English

    Similar titles

    Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD

    Asaoka, N. / Funato, H. / Suhara, M. et al. | British Library Online Contents | 2003

    Resonant tunneling electron beam source using GaAs/AlAs/GaAs field emitter

    Ohshima, T. / Mishima, T. / Okamoto, M. et al. | British Library Online Contents | 1997

    Migration of silicon atoms in planar-doped GaAs/AlGaAs modulation doped fluid effect transistor heterostructures grown by molecular beam epitaxy

    Carvalho, A. T. G. / De Oliveira, A. G. / Alves, E. S. et al. | British Library Online Contents | 1995

    DFT-NEGF simulation of graphene-graphdiyne-graphene resonant tunneling transistor

    Shohany, Boshra Ghanbari / Roknabadi, Mahmood Rezaie / Kompany, Ahmad | British Library Online Contents | 2018

    DFT-NEGF simulation of graphene-graphdiyne-graphene resonant tunneling transistor

    Shohany, Boshra Ghanbari / Roknabadi, Mahmood Rezaie / Kompany, Ahmad | British Library Online Contents | 2018

    Back to top