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Radio frequency power dependence of the characteristics of 3C-SiC on Si grown by triode plasma CVD using dimethylsilane
Radio frequency power dependence of the characteristics of 3C-SiC on Si grown by triode plasma CVD using dimethylsilane
Radio frequency power dependence of the characteristics of 3C-SiC on Si grown by triode plasma CVD using dimethylsilane
Yasui, K. (author) / Hashiba, M. (author) / Akahane, T. (author)
APPLIED SURFACE SCIENCE ; 216 ; 580-584
2003-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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