Radio frequency power dependence of the characteristics of 3C-SiC on Si grown by triode plasma CVD using dimethylsilane

Yasui, K. / Hashiba, M. / Akahane, T. | British Library Online Contents | 2003

Triode structure of ion detector based on 6H-SiC epitaxial films

Strokan, N. B. / Ivanov, A. M. / Davydov, D. V. et al. | British Library Online Contents | 2001

Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane

Yasui, K. / Asada, K. / Maeda, T. et al. | British Library Online Contents | 2001

Interpretation of initial stage of 3C-SiC growth on Si(100) using dimethylsilane

Narita, Y. / Harashima, M. / Yasui, K. et al. | British Library Online Contents | 2006

Si c(4x4) structure appeared in the initial stage of 3C-SiC epitaxial growth on Si(0 0 1) using monomethylsilane and dimethylsilane

Narita, Y. / Inubushi, T. / Yasui, K. et al. | British Library Online Contents | 2003