Predictive use of ab initio MO methods in PDECB-based approach to low-temperature epitaxy of stoichiometric group-III nitrides: Fid-Bau Portal

Predictive use of ab initio MO methods in PDECB-based approach to low-temperature epitaxy of stoichiometric group-III nitrides

Hayashi, K. / Kanayama, T. / Kojima, H. / Omote, N. / Shimizu, T.

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Predictive use of ab initio MO methods in PDECB-based approach to low-temperature epitaxy of stoichiometric group-III nitrides

Hayashi, K. / Kanayama, T. / Kojima, H. / Omote, N. / Shimizu, T.

Predictive use of ab initio MO methods in PDECB-based approach to low-temperature epitaxy of stoichiometric group-III nitrides

Hayashi, K. / Kanayama, T. / Kojima, H. / Omote, N. / Shimizu, T.

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Check availability in my library

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Document information

Title:

Predictive use of ab initio MO methods in PDECB-based approach to low-temperature epitaxy of stoichiometric group-III nitrides

Contributors:

Hayashi, K. (author) / Kanayama, T. (author) / Kojima, H. (author) / Omote, N. (author) / Shimizu, T. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 159-164

Publication date:

2003-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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