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    Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth

    New search for: Bickermann, M.
    New search for: Hofmann, D.
    New search for: Straubinger, T. L.
    New search for: Weingartner, R.
    New search for: Winnacker, A.
    New search for: Bergman, P.
    New search for: Janzen, E.

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    Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth

    New search for: Bickermann, M.
    New search for: Hofmann, D.
    New search for: Straubinger, T. L.
    New search for: Weingartner, R.
    New search for: Winnacker, A.
    New search for: Bergman, P.
    New search for: Janzen, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth

    New search for: Bickermann, M.
    New search for: Hofmann, D.
    New search for: Straubinger, T. L.
    New search for: Weingartner, R.
    New search for: Winnacker, A.
    New search for: Bergman, P.
    New search for: Janzen, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
    Title:

    Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth

    Contributors:

    Bickermann, M. (author) / Hofmann, D. (author) / Straubinger, T. L. (author) / Weingartner, R. (author) / Winnacker, A. (author) / Bergman, P. / Janzen, E.

    Published in:

    Silicon Carbide and Related Materials 2002 ; 51-54

    MATERIALS SCIENCE FORUM ; 433/436

    Publication date:

    2003-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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