Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
Bickermann, M. (Autor:in) / Hofmann, D. (Autor:in) / Straubinger, T. L. (Autor:in) / Weingartner, R. (Autor:in) / Winnacker, A. (Autor:in) / Bergman, P. / Janzen, E.
01.01.2003
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals
British Library Online Contents | 2002
|Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
British Library Online Contents | 2009
|Vanadium-free Semi-insulating 4H-SiC Substrates
British Library Online Contents | 2000
|Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals
British Library Online Contents | 2005
|A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates
British Library Online Contents | 2003
|