Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters

    New search for: Pintilie, I.
    New search for: Pintilie, L.
    New search for: Irmscher, K.
    New search for: Thomas, B.
    New search for: Bergman, P.
    New search for: Janzen, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters

    New search for: Pintilie, I.
    New search for: Pintilie, L.
    New search for: Irmscher, K.
    New search for: Thomas, B.
    New search for: Bergman, P.
    New search for: Janzen, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters

    New search for: Pintilie, I.
    New search for: Pintilie, L.
    New search for: Irmscher, K.
    New search for: Thomas, B.
    New search for: Bergman, P.
    New search for: Janzen, E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Deep Levels in As-Grown 4H-SiC Epitaxial Layers and their Correlation with CVD Parameters

    Contributors:

    Pintilie, I. (author) / Pintilie, L. (author) / Irmscher, K. (author) / Thomas, B. (author) / Bergman, P. / Janzen, E.

    Published in:

    Silicon Carbide and Related Materials 2002 ; 463-466

    MATERIALS SCIENCE FORUM ; 433/436

    Publication date:

    2003-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers

    Tanno, T. / Suto, K. / Oyama, Y. et al. | British Library Online Contents | 2003

    SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

    Park, C. K. / Lee, G. S. / Lee, J. Y. et al. | British Library Online Contents | 2007

    Optical investigation of deep defects in GaN epitaxial layers grown on 6H-SiC

    Pressel, K. / Nilsson, S. / Wetzel, C. et al. | British Library Online Contents | 1996

    Investigations of selectively grown GaN/InGaN epitaxial layers

    Gfrorer, O. / Off, J. / Sohmer, A. et al. | British Library Online Contents | 1997

    ODMR Studies of MOVPE-Grown GaN Epitaxial Layers

    Kunzer, M. / Kaufmann, U. / Maier, K. et al. | British Library Online Contents | 1994

    Back to top