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Optical investigation of deep defects in GaN epitaxial layers grown on 6H-SiC

Pressel, K. / Nilsson, S. / Wetzel, C. / Volta, D. / Meyer, B. K. / Loa, I. / Thurian, P. / Heitz, R. / Hoffmann, A. / Mokhov, E. N.

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Optical investigation of deep defects in GaN epitaxial layers grown on 6H-SiC

Pressel, K. / Nilsson, S. / Wetzel, C. / Volta, D. / Meyer, B. K. / Loa, I. / Thurian, P. / Heitz, R. / Hoffmann, A. / Mokhov, E. N.

Optical investigation of deep defects in GaN epitaxial layers grown on 6H-SiC

Pressel, K. / Nilsson, S. / Wetzel, C. / Volta, D. / Meyer, B. K. / Loa, I. / Thurian, P. / Heitz, R. / Hoffmann, A. / Mokhov, E. N.

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Title:

Optical investigation of deep defects in GaN epitaxial layers grown on 6H-SiC

Contributors:

Pressel, K. (author) / Nilsson, S. (author) / Wetzel, C. (author) / Volta, D. (author) / Meyer, B. K. (author) / Loa, I. (author) / Thurian, P. (author) / Heitz, R. (author) / Hoffmann, A. (author) / Mokhov, E. N. (author)

Published in:

MATERIALS SCIENCE AND TECHNOLOGY -LONDON- ; 12 ; 90-93

Publication date:

1996-01-01

Size:

4 pages

ISSN:

0267-0836

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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